Samsung to pour $9bn into Chinese flash memory plant
Samsung Electronics will spend around 10 trillion won ($8.91 billion) to double capacity at a cutting-edge memory chip plant in China by 2019, aiming to solidify its position at the top as the sale of rival Toshiba’s memory operations drags on. The South Korean giant will add a second production line for NAND flash memory at fabrication facilities in Xi’an, Shaanxi Province, enabling the plant to process 220,000 silicon wafers a month. Construction is set to begin this year.
